Removal of stressor layer from a spalled layer and method of making a bifacial solar cell using the same

摘要

A stressor layer used in a controlled spalling method is removed through the use of a cleave layer that can be fractured or dissolved. The cleave layer is formed between a host semiconductor substrate and the metal stressor layer. A controlled spalling process separates a relatively thin residual host substrate layer from the host substrate. Following attachment of a handle substrate to the residual substrate layer or other layers subsequently formed thereon, the cleave layer is dissolved or otherwise compromised to facilitate removal of the stressor layer. Such removal allows the fabrication of a bifacial solar cell.

主权项

1. A method comprising:
obtaining a first structure including a host substrate comprising a semiconductor material, a flexible handle substrate, a stressor layer, and a cleave layer, the cleave layer being positioned between the host substrate and the stressor layer, the stressor layer being positioned between the cleave layer and the flexible handle substrate; separating a portion of the semiconductor material from the host substrate using controlled spalling, thereby forming a second structure including the flexible handle substrate, the stressor layer, the cleave layer, and a residual substrate layer from the host substrate; compromising the cleave layer, and removing the stressor layer from the second structure.