Memory device and fabricating method thereof

摘要

The present disclosure provides a memory device and a fabricating method thereof. The memory device includes a substrate including a first metal layer formed therein, the first metal layer having at least a first surface with at least a first exposed portion of the first surface exposed at a lateral surface of the substrate, at least a first semiconductor chip formed on a top surface of the substrate, and a second metal layer surrounding the first semiconductor chip and extending to lateral surfaces of the substrate, at least a first portion of the second metal layer contacting the exposed surface of the first metal layer.

主权项

1. A semiconductor device comprising:
a substrate including a ground layer formed therein, the ground layer having at least a first surface with at least a first exposed portion of the first surface exposed at a lateral surface of the substrate; a plurality of first interconnections formed above the ground layer and spaced apart from the ground layer; a plurality of second interconnections formed below the ground layer and spaced apart from the ground layer; a plurality of conductive vias connecting respective first interconnections with respective second interconnections; at least a first semiconductor chip formed on a top surface of the substrate; a wire bonding connecting the first interconnections an the first semiconductor chip: a molding member disposed on the top surface of the substrate and configured to mold the semiconductor chip; and a shielding layer surrounding the molding member and extending to lateral surfaces of the substrate, at least a portion of the shielding layer contacting the exposed portion of the ground layer, wherein the ground layer has a plate-like shape extending laterally through the entire subtrate, werein at least a portion of the ground layer extends beneath an entire length of the semiconductor chip, and werein the ground layer includes a plurality of holes through which the plurality of conductive vias pass, and each conductive via is insulated from the ground layer by an instilation layer.