Semiconductor component and manufacturing method thereof

摘要

A semiconductor component includes: a semiconductor substrate; and a semiconductor device provided thereon, the device being a field-effect transistor that includes: a gate insulating film provided on the substrate; a gate electrode provided via the film; and a pair of source-drain regions provided to sandwich the electrode, the substrate including a patterned surface in a portion where the electrode is provided, the patterned surface of the substrate including a raised portion where the film is formed to cover a surface that lies on the same plane as a surface of the pair of source-drain regions, and the electrode is formed on a top surface of the film, and the patterned surface of the substrate including a recessed portion where the film is formed to cover surfaces of a groove formed toward the interior than the surface of the pair of source-drain regions, and the electrode is formed so as to fill the groove provided with the film.

主权项

1. A semiconductor component comprising:
a semiconductor substrate; and a semiconductor device on the semiconductor substrate, wherein, in cross section,
the semiconductor device has a pair of source and drain regions in the semiconductor substrate,at least a portion of the semiconductor substrate has a raised structure with a groove therein, where the groove extends into the semiconductor substrate and to the same depth as the deepest extent of the source-drain region,a gate insulating film lines all interior surfaces of the groove,a gate electrode is within the groove of the raised structure and surrounded on at least three sides by the gate insulating film, andthe pair of source region-drain regions are at opposite sides of the gate electrode.