| 发明名称 | System and method for sputtering a tensile silicon nitride film | ||
| 摘要 | There is provided a system and method for sputtering a tensile silicon nitride film. More specifically, in one embodiment, there is provided a method comprising introducing nitrogen gas into a process chamber, wherein the process chamber includes a target comprising silicon, placing the process chamber into a transition region between a metallic region and a poisoned region, and applying a voltage to the target. | ||
| 申请公布号 | US8936702(B2) | 申请公布日期 | 2015.01.20 |
| 申请号 | US200611370269 | 申请日期 | 2006.03.07 |
| 申请人 | Micron Technology, Inc. | 发明人 | McTeer Allen |
| 分类号 | C23C14/00;C23C14/32;C23C14/06;C23C14/34 | 主分类号 | C23C14/00 |
| 代理机构 | Fletcher Yoder PC | 代理人 | Fletcher Yoder PC |
| 主权项 | 1. A method comprising: introducing nitrogen gas into a process chamber at greater than 10.4 standard cubic centimeters per minute (sccm) and less than approximately 14 sccm, wherein the process chamber includes a target comprising silicon; placing the process chamber into a transition region between a metallic region and a poisoned region; applying a DC voltage greater than approximately 310 volts and less than approximately 380 volts to the target; sputtering a tensile silicon nitride film while the process chamber is in the transition region; and monitoring a cathode voltage of the target to detect a poisoned mode comprising an accumulation of a nitride surface on the target. | ||
| 地址 | Boise ID US | ||