发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a manufacturing method which prevents the problem of a short circuit between upper layer conductors, which is caused by a conductive material penetrating into a void of an insulation film which isolates twin plugs formed by division of one plug.SOLUTION: In an isolation process of twin plugs composed of a first conductive material 20B, by forming a bowing-shaped trench 20T with a lateral face wider than an opening, from which the first conductive material is separated and filling the trench 20T with a coating film 23 and subsequently etching back the whole to not greater than the maximum width of the bowing shape, and filling an isolation insulation film between the twin plugs after removing the coating film 23, the occurrence of a void in the isolation insulation film can be prevented.</p>
申请公布号 JP2015012120(A) 申请公布日期 2015.01.19
申请号 JP20130136034 申请日期 2013.06.28
申请人 MICRON TECHNOLOGY INC 发明人 FUJIMOTO HIROYUKI
分类号 H01L21/8242;H01L21/768;H01L23/522;H01L27/108 主分类号 H01L21/8242
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