| 摘要 |
PURPOSE: A wiring for a semiconductor device and a manufacturing method thereof are provided to prevent a hill lock phenomenon of a metal wiring by forming an oxide layer on the surface of the metal wiring through an oxygen annealing process. CONSTITUTION: A metal layer is formed on a semiconductor substrate(S1). An anti-reflection layer is formed on the metal layer(S2). The metal wiring is formed by etching the metal layer. The metal layer is exposed through a photoresist pattern and annealed under an oxygen atmosphere(S5). The oxygen layer is formed on the sidewall of the metal wiring. The metal wiring is annealed under a nitrogen atmosphere(S6).
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