| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element which can reduce ripples of a FFP (far field pattern).SOLUTION: A semiconductor laser element sequentially includes an n-side region 2, an active region and a p-side region. At least one of the n-side region and the p-side region includes: a light absorption part 23 having bandgap energy smallest in the n-side region or the p-side region; a first composition gradient part 22 which is provided in contact with the side of the light absorption part, which is closer to the active region and has bandgap energy decreasing and a refractive index difference decreasing as being closer to the light absorption part; and a second composition gradient part 24 which is provided in contact with the side of the light absorption part, which is farther from the active region and has bandgap energy increasing and a refractive index difference increasing with distance from the light absorption part. |
