发明名称 SEMICONDUCTOR PACKAGE CONTAINING THROUGH ELECTRODE AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor package, along with its manufacturing method, containing a through electrode enabling reduction in step cost for improved productivity.SOLUTION: A semiconductor package containing a through electrode and a method of manufacturing the same include: a wafer level package in which a first semiconductor chip containing a first semiconductor substrate of a chip level having a first through electrode is molded with a first mold film for stacking, and which is formed on the entire surface of a second semiconductor substrate of a wafer level having a second through electrode; a chip level package in which a fourth semiconductor chip containing a fourth semiconductor substrate of a chip level is molded with a second mold film for stacking, and which is formed on the entire surface of a third semiconductor substrate of a chip level having a third through electrode; a plurality of chip level packages which are stacked on a rear surface of the second semiconductor substrate; the first mold film and the first semiconductor chip which are polished so that the first through electrode is exposed; and an external electrode which is connected to the first through electrode, and formed on the first semiconductor chip that has been polished.
申请公布号 JP2015012291(A) 申请公布日期 2015.01.19
申请号 JP20140125071 申请日期 2014.06.18
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 CHUNG HYUNSOO;KIM JONGYEON;LEE IN-YOUNG;CHO TAE-JE
分类号 H01L25/065;H01L23/28;H01L25/07;H01L25/10;H01L25/11;H01L25/18 主分类号 H01L25/065
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