发明名称 |
SEMICONDUCTOR PACKAGE CONTAINING THROUGH ELECTRODE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor package, along with its manufacturing method, containing a through electrode enabling reduction in step cost for improved productivity.SOLUTION: A semiconductor package containing a through electrode and a method of manufacturing the same include: a wafer level package in which a first semiconductor chip containing a first semiconductor substrate of a chip level having a first through electrode is molded with a first mold film for stacking, and which is formed on the entire surface of a second semiconductor substrate of a wafer level having a second through electrode; a chip level package in which a fourth semiconductor chip containing a fourth semiconductor substrate of a chip level is molded with a second mold film for stacking, and which is formed on the entire surface of a third semiconductor substrate of a chip level having a third through electrode; a plurality of chip level packages which are stacked on a rear surface of the second semiconductor substrate; the first mold film and the first semiconductor chip which are polished so that the first through electrode is exposed; and an external electrode which is connected to the first through electrode, and formed on the first semiconductor chip that has been polished. |
申请公布号 |
JP2015012291(A) |
申请公布日期 |
2015.01.19 |
申请号 |
JP20140125071 |
申请日期 |
2014.06.18 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
CHUNG HYUNSOO;KIM JONGYEON;LEE IN-YOUNG;CHO TAE-JE |
分类号 |
H01L25/065;H01L23/28;H01L25/07;H01L25/10;H01L25/11;H01L25/18 |
主分类号 |
H01L25/065 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|