QUANTUM CASCADE LASER ELEMENT, METHOD OF DRIVING THE SAME, AND ELECTROMAGNETIC WAVE GENERATOR

摘要

PROBLEM TO BE SOLVED: To improve controllability and stability of laser output in a quantum cascade laser element.SOLUTION: A quantum cascade laser element 1 includes a GaAs substrate 11, an n-type GaAs layer 12, a quantum cascade layer 13, a p-type GaAs layer 14, an n-type AlGaAs layer 15, a first electrode 16, a second electrode 17, and a third electrode 18. The GaAs substrate 11 is a semi-insulating substrate. The n-type GaAs layer 12 is an n-doped semiconductor layer laminated on a surface of the GaAs substrate 11. For example, the n-type GaAs layer 12 has an electron concentration of 1×10cmby Sn doping and has a film thickness of 100 nm. The quantum cascade layer 13 is formed on a surface of the n-type GaAs layer 12 and constitutes a semiconductor superlattice.