| 摘要 |
The present invention relates to a method for manufacturing a semiconductor catalyst for contaminant purification comprising: (1) a step of inserting powders or massive metal into a sealed container and heating the same at 1000-2000°C; (2) a step of producing berthollide compounds in which an atom ratio of the metal and oxygen or nitrogen is not an integer by injecting the oxygen or nitrogen for 10-100 hours; and (3) a step of cooling the sealed container in which the oxygen or nitrogen is injected. The method for manufacturing a semiconductor catalyst for contaminant purification and a decontaminant using the same is able to manufacture a p-type semiconductor catalyst containing holes without light irradiation such as ultraviolet rays, visible rays and the like by producing a metal deficient berthollide compound by injecting oxygen or nitrogen of a constant partial pressure after inserting transition metal into the sealed container and heating the same at high temperatures and using the same as a semiconductor catalyst and is able to provide a widely used material suitable for various purposes at low costs. |
