CLEANING METHOD AND SUBSTRATE PROCESSING APPARATUS

摘要

An objective is to provide a cleaning method which can efficiently remove a reaction product attached to a gas passage, a gas supply hole and a processing vessel of a substrate processing apparatus. A substrate processing apparatus includes: a processing vessel; a supporting part provided in the processing vessel to support a substrate; an electrode plate provided in the processing vessel to face the supporting part; a gas supply source to supply a process gas; a plurality of gas passages divided into a first region corresponding to a first in-plane position of the substrate and a second region corresponding to a second in-plane position of the substrate different from the first in-plane position; a gas supply part to eject a process gas into a space between the supporting part and the electrode plate via a plurality of gas passages from the gas supply source; and a high-frequency power supply to convert the process gas in the space into a plasma by supplying high-frequency power to at least one side of the supporting part or the electrode plate. The method of cleaning the substrate processing apparatus includes: cleaning a first gas passage of the plurality of gas passages corresponding to the first region with the plasma of the process gas by causing a first amount of the process gas supplied to the first region to be lower than a second amount of the process gas supplied to the second region; and cleaning a second gas passage of the plurality of gas passages corresponding to the second region with the plasma of the process gas by causing a third amount of the process gas supplied to the first region to be higher than a fourth amount of the process gas supplied to the second region.