| 摘要 |
<p>The present invention relates to a method of forming a metal pattern, and more particularly, to a method of forming a metal pattern, in which an etching process for etching a metal layer and a photo-resist (PR) removing process in a photo-lithography process of a semiconductor are omitted. According to an embodiment of the present invention, by omitting the etching process for etching the metal layer and the photo-resist (PR) removing process in the photo-lithography process of the semiconductor, discharging of an environmentally harmful material accompanied with the etching process is suppressed so an eco-friendly metal forming process can be implemented and can be advantageous in mass production through simplifying a process procedure. In addition, by utilizing the photo-resist pattern structure as an insulating material of the metal pattern without separately removing the photo-resist pattern structure, a pattern having excellent insulation properties between metals can be formed by a convenient scheme.</p> |
