发明名称 |
METHOD OF FORMING A SHALLOW TRENCH ISOLATION STRUCTURE |
摘要 |
Embodiments of the disclosure include a shallow trench isolation (STI) structure and a method of forming the same. A trench is formed in a substrate. A silicon oxide and a silicon liner layer are formed on sidewalls and a bottom surface of the trench. A flowable silicon oxide material fills in the trench, is cured, and then is partially removed. Another silicon oxide is deposited in the trench to fill the trench. The STI structure in a fabricated device includes a bottom portion having silicon oxide and a top portion having additionally a silicon oxide liner and a silicon liner on the sidewalls. |
申请公布号 |
US2015014807(A1) |
申请公布日期 |
2015.01.15 |
申请号 |
US201313938948 |
申请日期 |
2013.07.10 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chuang Chia-Yi;Kung Ta-Hsiang;Lee Hsing-Jui;Chen Ming-Te |
分类号 |
H01L21/762;H01L29/06 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Hsin-Chu TW |