Integrated III-Nitride D-Mode HFET with Cascoded Pair Half Bridge

摘要

There are disclosed herein various implementations of a group III-V power conversion circuit including a monolithically integrated half bridge having a depletion mode III-Nitride field-effect transistor (FET), and a normally OFF composite cascoded switch including a depletion mode III-Nitride FET and an enhancement mode group IV FET. In one exemplary implementation, the monolithically integrated half bridge includes a high side depletion mode III-Nitride FET having an enable switch coupled in the conduction path of the high side depletion mode III-Nitride FET.

主权项

1. An integrated half bridge circuit including a high side switch and a low side switch, said integrated half bridge circuit comprising:
a die including first and second depletion mode III-Nitride field-effect transistors (FETs) monolithically integrated thereon; a group IV enhancement mode FET; said group IV enhancement mode FET cascoded with said first depletion mode III-Nitride FET to provide a normally OFF composite cascoded switch as said high side switch.