| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of reducing the cost of manufacture and improving a yield.SOLUTION: When a ptype region 2 and an ntype region 3 are formed on the same principal surface of an nsemiconductor wafer 1, firstly, the ptype region 2 is formed on the whole of the rear face of the nsemiconductor wafer 1 by first ion implantation. Next, a resist mask 22 selectively covering the rear face of the nsemiconductor wafer 1 is formed. Next, second ion implantation 23 of an n type impurity is performed on the rear face of the nsemiconductor wafer 1 by using the resist mask 22 as a mask to form the ntype region 3 at a part deeper than the ptype region 2 from the rear face of the nsemiconductor wafer 1. Next, the nsemiconductor wafer 1 is exposed to an oxygen (O) gas atmosphere to which a fluorine (F) gas is added to remove the resist mask 22, and to remove a silicon part provided between the rear face of the nsemiconductor wafer 1 in an FWD region 13 not covered with the resist mask 22, and the ntype region 3.</p> |
