发明名称 COMPOSITION FOR FORMING FINE RESIST PATTERN AND PATTERN FORMING METHOD USING SAME
摘要 [Object] To provide a composition enabling to form a fine negative photoresist pattern free from troubles, such as, surface roughness, bridge defects, and resolution failure; and also to provide a pattern formation method using that composition.;[Means to Solve the Problem] A fine pattern-forming composition is used for miniaturizing a resist pattern by fattening said pattern in a process of formation of a negative resist pattern using a chemically amplified resist composition. The fine pattern-forming composition comprises a polymer comprising a repeating unit having a structure of the following formula (A), (B) or (C):;;and a solvent. This composition is cast on a negative resist pattern obtained by development with an organic solvent developer, and then heated to form a fine pattern.
申请公布号 US2015017587(A1) 申请公布日期 2015.01.15
申请号 US201214344943 申请日期 2012.10.10
申请人 Okayasu Tetsuo;Sekito Takashi;Ishii Mashiro 发明人 Okayasu Tetsuo;Sekito Takashi;Ishii Mashiro
分类号 G03F7/40;G03F7/11 主分类号 G03F7/40
代理机构 代理人
主权项 1. A fine pattern-forming composition used for miniaturizing a resist pattern by fattening said pattern in a process of formation of a negative resist pattern using a chemically amplified resist composition, comprising a polymer comprising a repeating unit having a structure of the following formula (A), (B) or (C):and a solvent.
地址 Shizuoka JP
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