| 发明名称 |
SENSE AMPLIFIER LAYOUT FOR FINFET TECHNOLOGY |
| 摘要 |
A sense amplifier (SA) comprises a semiconductor substrate having an oxide definition (OD) region, a pair of SA sensing devices, a SA enabling device, and a sense amplifier enabling signal (SAE) line for carrying an SAE signal. The pair of SA sensing devices have the same poly gate length Lg as the SA enabling device, and they all share the same OD region. When enabled, the SAE signal turns on the SA enabling device to discharge one of the pair of SA sensing devices for data read from the sense amplifier. |
| 申请公布号 |
US2015015335(A1) |
申请公布日期 |
2015.01.15 |
| 申请号 |
US201313939201 |
申请日期 |
2013.07.11 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
CHEN Yen-Huei;TIEN Chien Chi;LIN Kao-Cheng;CHEN Jung-Hsuan |
| 分类号 |
H03F3/16;H01L21/28 |
主分类号 |
H03F3/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A sense amplifier (SA), comprising:
a semiconductor substrate having an oxide definition (OD) region; a pair of SA sensing devices sharing the same OD region, wherein the pair of SA sensing devices are transistors and have the same gate length; an SA enabling device sharing the same OD region as the pair of SA sensing devices; a sense amplifier enabling signal (SAE) line for carrying an SAE signal, for turning on the SA enabling device to discharge one of the pair of SA sensing devices during a data read from the sense amplifier. |
| 地址 |
Hsin-Chu TW |
