| 摘要 |
In a bipolar transistor of the present invention, a collector layer (3) is formed of three semiconductor layers, which are: an n-type GaAs layer (3a) (Si concentration: approximately 5×1015 cm-3, film thickness: approximately 350 nm); a p-type GaAs layer (3b) (C concentration: approximately 4.5×1015 cm-3, film thickness: approximately 100 nm, sheet concentration: 4.5×1010 cm-2), and an n-type GaAs layer (3c) (Si concentration: approximately 5×1015 cm-3, film thickness: approximately 500 nm). The sheet concentration of the p-type GaAs layer (3b) is set lower than 1×1011 cm-2. |
