| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a polarize electron beam generating element by which taking-out efficiency of a polarized electron beam becomes sufficient by inclining a doping quantity of impurity so that the internal side increases more than the surface side in a semiconductor photoelectroc layer arranged on a base board. SOLUTION: A polarized electron beam generator 10 has a first semiconductor 14 and a second semiconductor 16 grown into a crystal in order on a base board 12. Both the first semiconductor 14 and the second semiconductor are a compound semiconductor composed of a GaAs monocrystal, and Zn is respectively doped as impurity. A doping quantity of impurity Zn of the second semiconductor 16 is inclined so that the internal side increases more than the surface 18 side, and that the size of an electric field generated in the second semiconductor 16 caused by an inclined structure of this doping quantity becomes equal to or larger than (En1 /2aB*), and that energy not less than (Es =En1 /2aB*) being destructive energy of an exciton is imparted to the exciton. Therefore, since the exciton hindering a movement of an electron is not formed in the second semiconductor 16, taking-out efficiency of a polarized electron beam is enhanced.</p> |
