| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an element structure which is proper for stabilizing the emission current of a cold electron emission element, and is simple. SOLUTION: An emitter 13 having a tip portion P0 is made by processing a p-type semiconductor substrate 31, and an n-type source region 32 is provided on a p-type semiconductor substrate surface positioned apart from the emitter 13 in a transverse direction. An electrode layer 34 having an opening 15 surrounding the tip portion P0 of the emitter 13 is provided via an insulating layer 12, and the electrode layer 34 is extended so as to reach above the n-type source region 32. A voltage Vg (Vc) is applied to the electrode layer 34, a cold electron extracting electric field is applied to the tip portion P0 of the emitter 13, and simultaneously an inversion layer 36 is induced on the surface of the emitter 13 and on the surface of the p-type semiconductor substrate 31.</p> |
