| 发明名称 |
HIGH VOLTAGE LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR |
| 摘要 |
A high-voltage LDMOS device with voltage linearizing field plates and methods of manufacture are disclosed. The method includes forming a continuous gate structure over a deep well region and a body of a substrate. The method further includes forming oppositely doped, alternating segments in the continuous gate structure. The method further includes forming a contact in electrical connection with a tip of the continuous gate structure and a drain region formed in the substrate. The method further includes forming metal regions in direct electrical contact with segments of at least one species of the oppositely doped, alternating segments. |
| 申请公布号 |
US2015014769(A1) |
申请公布日期 |
2015.01.15 |
| 申请号 |
US201313939231 |
申请日期 |
2013.07.11 |
| 申请人 |
International Business Machines Corporation |
发明人 |
ELLIS-MONAGHAN John J.;LETAVIC Theodore J.;SHARMA Santosh;SHI Yun;ZIERAK Michael J. |
| 分类号 |
H01L29/66;H01L29/78 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
forming a continuous gate structure over a deep well region and a body of a substrate; forming oppositely doped, alternating segments in the continuous gate structure; forming a contact in electrical connection with a tip of the continuous gate structure and a drain region formed in the substrate; and forming metal regions in direct electrical contact with segments of at least one species of the oppositely doped, alternating segments. |
| 地址 |
Armonk NY US |
