| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent generation of a bridge between wirings, by a method wherein an insulating layer formed on a semiconductor substrate is etched to form contact holes, a conductive layer is formed on the insulating layer in such a way as to fill these contact holes and after the conductive layer is etched, the upper surface of the insulating layer is etched. SOLUTION: Gate electrodes 104 are formed on a semiconductor substrate 100, and an insulating layer 106 for insulating the part between wirings is formed on the whole surface of the substrate 100 including the electrodes 104. The layer 106 is etched to form contact holes 108, and a conductive layer 110 is formed on an upper insulating layer 106b in a thickness enough for filling completely the holes 108. Moreover, the layer 110 is etched until the upper surface of the layer 106b is exposed to form contact plugs 110a. Thereafter, the layer 106b and a lower insulating layer 106a are etched in a flattening etching process to flatten the layer 106a.</p> |
