| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor substrate evaluation method and a semiconductor substrate for evaluation, which can evaluate, with high accuracy, junction leakage current characteristics regarding a high quality wafer used for products such as a CCD and a CMOS sensor which require high yield. <P>SOLUTION: A semiconductor substrate evaluation method comprises: forming on an evaluation target semiconductor substrate 1, a plurality of PN junctions 5, an isolation oxide film 6 for isolating the PN junctions 5 from each other and a channel stop layer 3 positioned under the isolation oxide film 6; and measuring junction leakage currents at the PN junctions 5 to perform evaluation. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
