| 摘要 |
To provide a sputtering target with which a crystalline metal oxide film can be formed. The sizes of crystal grains or crystal regions of the metal oxide included in the sputtering target are made uniform. Further, the crystal grains or the crystal regions are made smaller. Specifically, the sputtering target includes a polycrystalline metal oxide in which an average of grain sizes of the crystal grains is greater than or equal to 0.1 mum and less than or equal to 3 mum and a standard deviation of the grain sizes of the crystal grains is less than or equal to ½ of the average of the grain sizes of the crystal grains. Alternatively, the sputtering target includes a metal oxide having a plurality of crystal regions in which c-axes are aligned perpendicularly to a surface. |
