| 摘要 |
<p>A high quality single crystal wafer of SiC is disclosed. The wafer has a diameter of at least about 3 inches (75 mm) and at least one continuous square inch (6.25 cm<SUP>2</SUP>) of surface area that has a basal plane dislocation volume density of less than about 500 cm<SUP>-2 </SUP>for a 4 degree off-axis wafer.</p> |
