WIDE BAND GAP SEMICONDUCTOR DEVICE

摘要

The present invention relates to a wide band gap semiconductor device capable of suppressing an electrostatic breakdown between a gate electrode and a source electrode without increasing chip costs. The present invention includes: a second source layer (n+ source layer 4A) formed on a surface layer of a p base layer (3A) in the same step as that of forming a n+ source layer (4) by sandwiching a field insulating film (11); a second gate electrode (gate polysilicon 7A) being the same layer as a gate polysilicon (7) and formed at least on the field insulating film (11); a third gate electrode (12) formed on one part of the second source layer to be electrically connected to the second gate electrode; and a second source electrode (9A) formed on the other part of the second source layer.