发明名称 |
PROCESS FOR THE PRODUCTION OF MEDIUM AND HIGH PURITY SILICON FROM METALLURGICAL GRADE SILICON |
摘要 |
A process for purifying low-purity metallurgical grade silicon, contains at least one contaminant and obtains a higher-purity solid polycrystalline silicon. The process includes containing a melt of low-purity metallurgical grade silicon in a mold having insulated bottom and side walls, and an open top; solidifying the melt by unidirectional solidification from the open top towards the bottom wall while electromagnetically stirring the melt; controlling a rate of the unidirectional solidification; stopping the unidirectional solidification when the melt has partially solidified to produce an ingot having an exterior shell including the higher-purity solid polycrystalline silicon and a center including an impurity-enriched liquid silicon; and creating an opening in the exterior shell of the ingot to outflow the impurity-enriched liquid silicon and leave the exterior shell which has the higher-purity solid polycrystalline silicon. |
申请公布号 |
EP2212249(B1) |
申请公布日期 |
2015.01.14 |
申请号 |
EP20080733596 |
申请日期 |
2008.03.13 |
申请人 |
SILICIO FERROSOLAR, S.L.U. |
发明人 |
LEBLANC, DOMINIC;BOISVERT, RENÉ |
分类号 |
C01B33/037 |
主分类号 |
C01B33/037 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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