| 摘要 |
PURPOSE: A transmission gate and a semiconductor device are provided to control gate voltage of a MOS transistor comprising the transmission gate, thereby reducing the influence by clock feedthrough. CONSTITUTION: A transmission gate(10) includes a PMOS transistor(11), an NMOS transistor(12), a first level shifter(13), a second level shifter(14), and a gate voltage selection circuit(15). The transmission gate includes an input terminal, an output terminal, and a control terminal. The input terminal of the gate voltage selection circuit is connected to the output terminal of the first level shifter. A second input terminal of the gate voltage selection circuit is connected to the output terminal of the second level shifter. The control terminal of the gate voltage selection circuit is connected to the control terminal of the transmission gate. A first output terminal of the gate voltage selection circuit is connected to a gate of the PMOS transistor.
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