Thin film transistor substrate having metal oxide semiconductor and method for manufacturing the same

摘要

The present disclosure relates to a thin film transistor substrate with a metal oxide semiconductor layer that has enhanced characteristics and stability. The present disclosure also relates to a method for manufacturing a thin film transistor substrate in which a thermal treatment is conducted for the metal oxide semiconductor layer and the damages to the substrate by the thermal treatment are minimized.

主权项

1. A method of manufacturing a thin film transistor substrate, comprising:
depositing, in sequence, a gate electrode metal material, a gate insulating material, and a metal oxide semiconductor material on a substrate; conducting a thermal treatment after depositing the gate electrode metal material, the gate insulating material and the metal oxide semiconductor material; forming a gate electrode, a gate insulating layer, and a semiconductor active layer by patterning the gate electrode metal material, the gate insulating material, and the metal oxide semiconductor material, simultaneously in a single mask process after conducting the thermal treatment; forming a gate line after forming the gate electrode, the gate line contacting portions of the gate electrode and extending in a horizontal direction on the substrate; forming an intermediate insulating layer covering the gate line and the gate electrode and exposing middle portions of the semiconductor active layer; and forming a data line extending in a vertical direction on the intermediate insulating layer, a source electrode branching from the data line and contacting one side of the semiconductor active layer, and a drain electrode facing the source electrode apart from a predetermined distance and contacting other side of the semiconductor active layer.