发明名称 |
Glass substrate for flat panel display and method for manufacturing same |
摘要 |
Provided are: a glass substrate for p-Si TFT flat panel displays that is composed of a glass having high characteristic temperatures in the low-temperature viscosity range, typified by the strain point and glass transition point, having a small heat shrinkage rate, and being capable of avoiding the occurrence of the problem regarding the erosion/wear of a melting tank at the time of melting through direct electrical heating; and a method for manufacturing same. The present glass substrate is composed of a glass comprising 52-78 mass % of SiO2, 3-25 mass % of Al2O3, 3-15 mass % of B2O3, 3-25 mass % of RO, wherein RO is total amount of MgO, CaO, SrO, and BaO, 0.01-1 mass % of Fe2O3, and 0-0.3 mass % of Sb2O3, and substantially not comprising As2O3, the glass having a mass ratio (SiO2+Al2O3)/B2O3 in a range of 7-30 and a mass ratio (SiO2+Al2O3)/RO equal to or greater than 6. The present method for manufacturing a glass substrate involves: a melting step of obtaining a molten glass by melting, by employing at least direct electrical heating, glass raw materials blended so as to provide the aforementioned glass composition; a forming step of forming the molten glass into a flat-plate glass; and an annealing step of annealing the flat-plate glass. |
申请公布号 |
US8932969(B2) |
申请公布日期 |
2015.01.13 |
申请号 |
US201213537774 |
申请日期 |
2012.06.29 |
申请人 |
AvanStrate Inc. |
发明人 |
Koyama Akihiro;Ami Satoshi;Ichikawa Manabu |
分类号 |
C03C3/091;C03C3/085;C03C3/087;C03C3/093 |
主分类号 |
C03C3/091 |
代理机构 |
Sughrue Mion, PLLC |
代理人 |
Sughrue Mion, PLLC |
主权项 |
1. A method of manufacturing a glass substrate for a flat panel display, the method comprising:
a melting step of melting, by employing at least direct electrical heating, glass raw materials blended so as to provide a glass comprising: 52-78 mass % of SiO2, 3-25 mass % of Al2O3, 3-15 mass % of B2O3, 3-25 mass % of RO, wherein RO is total amount of MgO, CaO, SrO, and BaO, 0.01-1 mass % of Fe2O3, and 0-0.3 mass % of Sb2O3, and substantially not comprising As2O3, the glass having a mass ratio (SiO2+Al2O3)/B2O3 in a range of 7-30 and a mass ratio (SiO2+Al2O3)/RO equal to or greater than 6; a forming step of forming the molten glass into a flat-plate glass; and an annealing step of annealing the flat-plate glass, wherein a heat shrinkage reduction process is performed in the annealing step, the heat shrinkage reduction process being a process in which cooling rate in a central section of the flat-plate glass is set to 50-300° C./minute within a temperature range of from Tg to 100° C. below Tg. |
地址 |
Yokkaichi-shi JP |