Nonvolatile memory device, method of operating the same and electronic device including the same

摘要

A nonvolatile memory device and a method of operating the same are provided. The method includes performing a plurality of program operations on a plurality of memory cells each to be programmed to one of a plurality of program states, performing a program-verify operation on programmed memory cells associated with each of the plurality of program states, the program-verify operation comprises, selecting one of the plurality of offsets based on a noise level of a common source line associated with a programmed memory cell, using the selected offset to select one of a first verify voltage and a second verify voltage higher than the first verify voltage, and verifying a program state of the programmed memory cell using the first verify voltage and the second verify voltage.

主权项

1. A method of operating a nonvolatile memory device, the method comprising:
performing a plurality of program operations on a plurality of memory cells each to be programmed to one of a plurality of program states; performing a program-verify operation on programmed memory cells of the plurality of memory cells, the programmed memory cells associated with each of the plurality of program states, wherein the program-verify operation comprises;
selecting one of a plurality of offsets based on a noise level of a common source line associated with a programmed memory cell of the programmed memory cells;using the selected offset to select one of a first verify voltage and a second verify voltage higher than the first verify voltage; andverifying a program state of the programmed memory cell using the first verify voltage and the second verify voltage,wherein the selected offset is a difference between the first verify voltage and the second verify voltage, and wherein a selected offset has an increased value as the number of program operations performed on the memory cells increases.