发明名称 Method of fabricating low-dislocation-density epitaxially-grown films with textured surfaces
摘要 A method for forming a surface-textured single-crystal film layer by growing the film atop a layer of microparticles on a substrate and subsequently selectively etching away the microparticles to release the surface-textured single-crystal film layer from the substrate. This method is applicable to a very wide variety of substrates and films. In some embodiments, the film is an epitaxial film that has been grown in crystallographic alignment with respect to a crystalline substrate.
申请公布号 US8932403(B1) 申请公布日期 2015.01.13
申请号 US201113113123 申请日期 2011.05.23
申请人 Sandia Corporation 发明人 Li Qiming;Wang George T.
分类号 C30B21/02 主分类号 C30B21/02
代理机构 代理人 Ashby Carol I.;Bieg Kevin W.
主权项 1. A method for preparing a surface-textured single-crystal film layer, the method comprising: preparing a layered structure comprising a substrate with a crystalline surface, a layer of microparticles atop the substrate; and a single-crystal film layer atop the layer of microparticles, wherein the single-crystal film layer is connected epitaxially to the crystalline surface of the substrate; selectively etching the microparticles using an etchant that etches the microparticles sufficiently rapidly to substantially etch away the solid interface between the microparticles and at least one of the substrate and the single-crystal film layer while not substantially etching the single-crystal film layer; and releasing the single-crystal film layer from the substrate when a sufficient amount of the microparticles have been etched away, wherein the single-crystal film layer that has been released is the surface-textured single-crystal film layer.
地址 Albuquerque NM US