发明名称 Focused ion beam low kV enhancement
摘要 The invention provides a charged particle beam system wherein the middle section of the focused ion beam column is biased to a high negative voltage allowing the beam to move at higher potential than the final beam energy inside that section of the column. At low kV potential, the aberrations and coulomb interactions are reduced, which results in significant improvements in spot size.
申请公布号 US8933414(B2) 申请公布日期 2015.01.13
申请号 US201313779142 申请日期 2013.02.27
申请人 FEI Company 发明人 Maazouz Mostafa
分类号 H01J37/05;H01J49/10;H01J49/26;G01R31/305;H01J37/04;H01J3/02 主分类号 H01J37/05
代理机构 Scheinberg & Associates, PC 代理人 Scheinberg & Associates, PC ;O Ki;Hillert John E.
主权项 1. An apparatus comprising: a source of a primary ion beam for use on a target; a focused ion beam column having a booster tube that can either be grounded or biased to a high negative voltage wherein the booster tube comprises an electrode of a first lens, an electrode of a second lens, and one or more electrostatic deflectors, wherein the one or more electrostatic deflectors are referenced to the booster tube bias voltage.
地址 Hillsboro OR US
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