| 发明名称 | Nonvolatile memory having stacked structure and related method of operation | ||
| 摘要 | A method is provided for operating a nonvolatile memory comprising memory cells stacked on a substrate. The method comprises counting a number of program loops performed in a first program operation of selected memory cells connected to a selected wordline, and controlling an increment of a program voltage between successive program loops of a second program operation of the selected memory cells according to the counted number. | ||
| 申请公布号 | US8934302(B2) | 申请公布日期 | 2015.01.13 |
| 申请号 | US201213600327 | 申请日期 | 2012.08.31 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Kwak Dong-Hun |
| 分类号 | G11C16/04;G11C7/00;H01L27/115 | 主分类号 | G11C16/04 |
| 代理机构 | Volentine & Whitt, PLLC | 代理人 | Volentine & Whitt, PLLC |
| 主权项 | 1. A method of operating a nonvolatile memory comprising memory cells stacked on a substrate, the method comprising: counting a number of program loops performed in a first program operation of selected memory cells connected to a selected wordline; and controlling an increment of a program voltage between successive program loops of a second program operation of the selected memory cells according to the counted number. | ||
| 地址 | Suwon-si, Gyeonggi-do KR | ||