| 摘要 |
PROBLEM TO BE SOLVED: To provide a C/C crucible for pulling an Si single crystal, which is produced by a simple method at a low cost and has excellent corrosion resistance to gaseous SiO and high durability, and to provide methods of producing and repairing the same. SOLUTION: The C/C crucible for pulling an Si single crystal is obtained by forming a coated layer of a mixed paste of a carbonaceous fine powder and a thermosetting resin on at least a part of the inner surface, fixing a carbon fiber cloth or a prepreg sheet obtained by impregnating the thermosetting resin into the carbon fiber cloth or an expansive graphite sheet on the coated layer, and firing/carbonizing the fixed material to form a carbide layer. The method for producing the C/C crucible comprises coating/fixing the mixed paste being mixed in a prescribed weight ratio in a prescribed thickness and fixing the carbon cloth or its prepreg sheet or the expansive graphite sheet and firing/ carbonizing. A damaged area of the C/C crucible is repaired by applying the production method mentioned above.
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