| 摘要 |
FIELD: electricity.SUBSTANCE: semiconductor amplifier of optical emission includes a heterostructure at the substrate of n-type conductivity consisting of wide-gap emitters of n-type and p-type conductivity, a ducting layer, an active area that includes a quantum-size active layer, facets limiting the crystal the heterostructure layers crosswise, the first ohmic contact at outer side of the substrate and the second ohmic contact at the side of the emitter with p-type conductivity thus forming the amplification area and injection area, and absorption area placed outside limits of the amplification area. At that the amplification and absorption areas are coupled optically through a part of the ducting layer common for the amplification and absorption areas, the third ohmic contact is formed for the absorption, it is located from the side of the emitter with p-type conductivity, which geometric dimensions are defined according to the preset ratio. Electric insulation of the second and third ohmic contacts is ensured by etched mesa cavity or by etching of a part of the emitter with p-type conductivity.EFFECT: ensuring simplification of processes, increasing optical power of the input laser pulse.2 cl, 3 dwg |
