| 摘要 |
FIELD: chemistry.SUBSTANCE: in the method of forming high current-carrying capacity YBaCuOfilms on a gold buffer underlayer, a gold contact pad is formed on a dielectric substrate before depositing YBaCuOfilms on the dielectric substrate. Targets made of gold and ceramic YBaCuOare sputtered using a laser with radiation wavelength of 1.06 mcm, pulse duration of 10-20 ns, pulse repetition frequency of 10 Hz and laser radiation power density of (5-7)·10W/cm. The method comprises preheating the gold target and substrate to temperature T=450-500°C, establishing pressure of 0.1-0.5 Pa, sputtering the gold target onto the substrate through a screen, placed 0.3-0.5 mm from the substrate, heating the YBaCuOtarget to T=600-700°C, heating the substrate to 800-840°C, establishing pressure of 50-100 Pa and sputtering the YBaCuOtarget onto the formed contact pads to thickness of 50-200 nm to form films with critical temperature of the superconducting junction T=88-89 K, width of the superconducting junction ?T= 2-3 K and critical current density J>10A/cm.EFFECT: obtaining superconducting films with high current-carrying capacity on a gold buffer underlayer, which provide high density of critical supercurrent density.6 dwg |
