PHOTODIODE AND CIRCUIT INCORPORATING LIGHT RECEIVING ELEMENT COMPRISING IT

摘要

PROBLEM TO BE SOLVED: To prevent deterioration of response characteristics by suppressing abnormal increase in the junction capacitance of a photodiode due to static electricity. SOLUTION: An antireflection film comprising a silicon oxide film 6 and a silicon nitride film 7 is formed on the surface of a light receiving region 100, an AlSi conductive film 9 is formed on the periphery of the light receiving region 100, a PSG protective film 10 of insulating material is formed on the AlSi film 9, and a part of the PSG protective film 10 is removed to form a window region 400 for exposing the AlSi film 9.