| 摘要 |
<p>The preset invention provides a semiconductor device with a plurality of pillar structures as a channel region and a manufacturing method thereof. The semiconductor device according to the present invention includes a nitride layer, a first oxide layer which is arranged on the upper side of the nitride layer, the pillar structures which pass through the first oxide layer from the nitride layer and protrude to the upper side of the first oxide layer, a gate insulation layer which covers the upper surface of the first oxide layer and the sides of the pillar structures which protrude to the upper side of the first oxide layer, a gate electrode which covers the gate insulation layer, a second insulation layer which is arranged on the upper side of the gate electrode, and a first electrode which is arranged on the second insulation layer and is connected to the pillar structures.</p> |
