| 摘要 |
A novel programming method for suppressing deterioration of an insulating layer in a memory cell is provided. In the programming method for a flash memory of the present invention, a cell unit including programming units that have been programmed is electrically isolated from a bit line (BL); a cell unit not including programming units is electrically coupled to the BL; a programming voltage is applied to selected word lines; and a pass voltage is applied to non-selected word lines. Moreover, during a period of applying the programming voltage, carriers are generated in a P-well, and hot carriers passing through a depletion region and accelerated by an electric field are injected into the memory cell. |
