SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A manufacturing method of a semiconductor device in which the threshold voltage is adjusted is provided. The semiconductor device includes a first semiconductor, an electrode electrically connected to the first semiconductor, a gate electrode, and an electron trap layer between the gate electrode and the first semiconductor. By performing heat treatment at higher than or equal to 125° C. and lower than or equal to 450° C. and, at the same time, keeping a potential of the gate electrode higher than a potential of the electrode for 1 second or more, the threshold voltage is increased.

主权项

1. A manufacturing method of a semiconductor device comprising:
forming a first semiconductor; forming an electron trap layer over the first semiconductor; forming a gate electrode over the electron trap layer; forming an electrode electrically connected to the first semiconductor; and keeping a potential of the gate electrode higher than a potential of the electrode for 1 second or longer at a temperature higher than or equal to 125° C. and lower than or equal to 450° C. thereby increasing a threshold voltage of the semiconductor device.