| 发明名称 |
LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure. |
| 申请公布号 |
US2015010032(A1) |
申请公布日期 |
2015.01.08 |
| 申请号 |
US201414273067 |
申请日期 |
2014.05.08 |
| 申请人 |
Sony Corporation |
发明人 |
Oki Tomoyuki;Masui Yuji;Yamauchi Yoshinori;Koda Rintaro;Arakida Takahiro |
| 分类号 |
H01S5/183;H01S5/18;H01S5/22;H01S5/343 |
主分类号 |
H01S5/183 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A light-emitting element comprising:
a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order,wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure;
a wall structure disposed so as to surround the mesa structure, the wall structure having the same layer structure as a portion of the mesa structure in which the insulation region is provided; at least one bridge structure connecting the mesa structure and the wall structure, the bridge structure having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode electrically connected to the first compound semiconductor layer; and a second electrode disposed on a top face of the wall structure, the second electrode being electrically connected to the second compound semiconductor layer of the mesa structure through the bridge structure. |
| 地址 |
Tokyo JP |
