| 摘要 |
A substrate capable of achieving a lowered probability of defects produced in a step of forming an epitaxial film or a semiconductor element, a semiconductor device including the substrate, and a method of manufacturing a semiconductor device are provided. A substrate is a substrate having a front surface and a back surface, in which at least a part of the front surface is composed of single crystal silicon carbide, the substrate having an average value of surface roughness Ra at the front surface not greater than 0.5 nm, a standard deviation σ of that surface roughness Ra not greater than 0.2 nm, an average value of surface roughness Ra at the back surface not smaller than 0.3 nm and not greater than 10 nm, standard deviation σ of that surface roughness Ra not greater than 3 nm, and a diameter D of the front surface not smaller than 110 mm. |
