发明名称 |
PLASMA PROCESSING DEVICE AND HIGH-FREQUENCY GENERATOR |
摘要 |
Provided is a plasma processing device which processes an object to be processed using plasma. The plasma processing device includes: a processing container configured to perform a processing by the plasma therein; and a plasma generation mechanism including a high-frequency generator disposed outside the processing container to generate high-frequency waves. The plasma generation mechanism is configured to generate the plasma in the processing container using the high-frequency waves generated by the high-frequency generator. The high-frequency generator includes a high-frequency oscillator configured to oscillate the high-frequency waves and an injection unit configured to inject a signal into the high-frequency oscillator. The signal has a frequency which is the same as a fundamental frequency oscillated by the high-frequency oscillator and has reduced different frequency components. |
申请公布号 |
US2015007940(A1) |
申请公布日期 |
2015.01.08 |
申请号 |
US201314380331 |
申请日期 |
2013.01.15 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
Kaneko Kazushi;Funazaki Kazunori;Kato Hideo |
分类号 |
H01J37/32;C23C16/52;H01J37/34;C23C16/511 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
1. A plasma processing device which processes an object to be processed using plasma, the plasma processing device comprising:
a processing container configured to perform a processing by the plasma therein; and a plasma generation mechanism including a high-frequency generator disposed outside the processing container to generate high-frequency waves, and the plasma generation mechanism being configured to generate the plasma in the processing container using the high-frequency waves generated by the high-frequency generator, wherein the high-frequency generator includes a high-frequency oscillator configured to oscillate the high-frequency waves and an injection unit configured to inject a signal into the high-frequency oscillator, the signal having a frequency which is the same as a fundamental frequency oscillated by the high-frequency oscillator and having reduced different frequency components. |
地址 |
Tokyo JP |