发明名称 PLASMA PROCESSING DEVICE AND HIGH-FREQUENCY GENERATOR
摘要 Provided is a plasma processing device which processes an object to be processed using plasma. The plasma processing device includes: a processing container configured to perform a processing by the plasma therein; and a plasma generation mechanism including a high-frequency generator disposed outside the processing container to generate high-frequency waves. The plasma generation mechanism is configured to generate the plasma in the processing container using the high-frequency waves generated by the high-frequency generator. The high-frequency generator includes a high-frequency oscillator configured to oscillate the high-frequency waves and an injection unit configured to inject a signal into the high-frequency oscillator. The signal has a frequency which is the same as a fundamental frequency oscillated by the high-frequency oscillator and has reduced different frequency components.
申请公布号 US2015007940(A1) 申请公布日期 2015.01.08
申请号 US201314380331 申请日期 2013.01.15
申请人 TOKYO ELECTRON LIMITED 发明人 Kaneko Kazushi;Funazaki Kazunori;Kato Hideo
分类号 H01J37/32;C23C16/52;H01J37/34;C23C16/511 主分类号 H01J37/32
代理机构 代理人
主权项 1. A plasma processing device which processes an object to be processed using plasma, the plasma processing device comprising: a processing container configured to perform a processing by the plasma therein; and a plasma generation mechanism including a high-frequency generator disposed outside the processing container to generate high-frequency waves, and the plasma generation mechanism being configured to generate the plasma in the processing container using the high-frequency waves generated by the high-frequency generator, wherein the high-frequency generator includes a high-frequency oscillator configured to oscillate the high-frequency waves and an injection unit configured to inject a signal into the high-frequency oscillator, the signal having a frequency which is the same as a fundamental frequency oscillated by the high-frequency oscillator and having reduced different frequency components.
地址 Tokyo JP