SEMICONDUCTOR DEVICE

摘要

A semiconductor device according to the present invention includes a base plate, an insulating layer provided on an upper surface of the base plate, a metal pattern provided on an upper surface of the insulating layer, a semiconductor element bonded to the metal pattern, and an insulating substrate disposed to be in contact with an upper surface of the semiconductor element. An end of the insulating substrate is located outside the semiconductor element in plan view. The end of the insulating substrate and the metal pattern are directly or indirectly bonded. The semiconductor element includes an electrode on the upper surface. A portion of the insulating substrate, in which the electrode on the upper surface of the semiconductor element overlaps in plan view, is provided with a through-hole.

主权项

1. A semiconductor device, comprising:
a base plate; an insulating layer provided on an upper surface of said base plate; a metal pattern provided on an upper surface of said insulating layer; at least one semiconductor element bonded to said metal pattern; and an insulating substrate disposed to be in contact with an upper surface of said at least one semiconductor element, wherein an end of said insulating substrate is located outside said at least one semiconductor element in plan view, said end of said insulating substrate and said metal pattern are directly or indirectly bonded, said at least one semiconductor element includes an electrode on the upper surface of said at least one semiconductor element, and a portion of said insulating substrate, in which said electrode on the upper surface of said at least one semiconductor element overlaps in plan view, is provided with a through-hole.