发明名称 Method and Structure of Packaging Semiconductor Devices
摘要 A method for fabricating packaged semiconductor devices; attaching a batch-sized metallic grid with openings onto an adhesive tape having an insulating clear core covered by a layer of UV-releasable adhesive, the openings sized larger than a semiconductor chip; attaching a semiconductor chip onto the tape of each window, the chip terminals facing the adhesive surface; laminating insulating material of low coefficient of thermal expansion to fill gaps between each chip and respective grid; turning over assembly to place a carrier under backside of chips and lamination and to remove the tape; plasma-cleaning the assembly front side and sputtering uniform at least one metal layer across the assembly; optionally plating metal layers; and patterning the metal layers to form rerouting traces and extended contact pads for assembly.
申请公布号 US2015008583(A1) 申请公布日期 2015.01.08
申请号 US201414321500 申请日期 2014.07.01
申请人 Texas Instruments Incorporated 发明人 Gerber Mark A.
分类号 H01L21/78;H01L21/768;H01L21/56;H01L23/28;H01L23/482 主分类号 H01L21/78
代理机构 代理人
主权项 1. A method for fabricating packaged semiconductor devices, comprising: providing a flat carrier sheet secured in a frame to restrain warpage, the carrier having an insulating core of clear laminate material and a surface covered by a layer of a UV-releasable adhesive, the frame having lateral dimensions comparable to a semiconductor wafer; attaching the surface of a metallic window frame onto the adhesive panel surface, the frame including a plurality of rectangular windows bordered by a metal grid and sized larger than a semiconductor chip; attaching a plurality of semiconductor chips to the adhesive carrier surfaces in respective windows, the chip terminals facing the adhesive surface; compression-molding a compliant insulating material to cohesively fill gaps between chips and grid sidewalls, the material having a coefficient of thermal expansion approaching the coefficient of the semiconductor chips, thereby creating an assembly; using UV irradiation, separating the carrier sheet and frame from the assembly, thereby exposing the surfaces of the chips with terminals and the grid metals; plasma-cleaning the carrier and attached chips uniformly in an equipment for sputtering metals; and sputtering, at uniform energy and rate and while cooling the assembly, at least one metal layer adhering to the assembly of chips and grid metal.
地址 Dallas TX US