| 发明名称 |
ANALYSIS DEVICE, ANALYSIS METHOD, FILM FORMATION DEVICE, AND FILM FORMATION METHOD |
| 摘要 |
An analysis device includes an X-ray generation part configured to generate four monochromatic X-rays with different energies to irradiate a sample, an electrically conductive sample stage configured to place the sample thereon and formed of an electrically conductive material, an electrode configured to detect an electric current carried by irradiating the sample with the four monochromatic X-rays with different energies, and an electric power source configured to apply a voltage between the electrically conductive sample stage and the electrode, wherein the four monochromatic X-rays with different energies are X-rays included within a range from an absorption edge of a compound semiconductor included in the sample to a higher energy side of 300 eV. |
| 申请公布号 |
US2015011024(A1) |
申请公布日期 |
2015.01.08 |
| 申请号 |
US201414293008 |
申请日期 |
2014.06.02 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
NOMURA KENJI |
| 分类号 |
H01L21/66;H01L21/02 |
主分类号 |
H01L21/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An analysis device comprising:
an X-ray generation part configured to generate four monochromatic X-rays with different energies to irradiate a sample; an electrically conductive sample stage configured to place the sample thereon and formed of an electrically conductive material; an electrode configured to detect an electric current carried by irradiating the sample with the four monochromatic X-rays with different energies; and an electric power source configured to apply a voltage between the electrically conductive sample stage and the electrode, wherein the four monochromatic X-rays with different energies are X-rays included within a range from an absorption edge of a compound semiconductor included in the sample to a higher energy side of 300 eV. |
| 地址 |
Kawasaki-shi JP |
