METHOD FOR FORMING FINE PITCH STRUCTURES

摘要

A mold having an open interior volume is used to define patterns. The mold has a ceiling, floor and sidewalls that define the interior volume and inhibit deposition. One end of the mold is open and an opposite end has a sidewall that acts as a seed sidewall. A first material is deposited on the seed sidewall. A second material is deposited on the deposited first material. The deposition of the first and second materials is alternated, thereby forming alternating rows of the first and second materials in the interior volume. The mold and seed layer are subsequently selectively removed. In addition, one of the first or second materials is selectively removed, thereby forming a pattern including free-standing rows of the remaining material. The free-standing rows can be utilized as structures in a final product, e.g., an integrated circuit, or can be used as hard mask structures to pattern an underlying substrate. The mold and rows of material can be formed on multiple levels. The rows on different levels can crisscross one another. Selectively removing material from some of the rows can from openings to form, e.g., contact vias.

主权项

1. A method for semiconductor processing, comprising:
sequentially laterally growing a first plurality of alternating rows formed of first and the second materials on a first level over a substrate, wherein the rows alternate as seen in a top-down view; selectively removing the rows formed of the first material relative to the rows formed of the second material; and transferring a pattern formed by the rows of the second material to the substrate.