| 摘要 |
<p>A substrate processing apparatus for processing a substrate with plasma including: a container including a first container member that forms a processing space in which the substrate is processed, and a second container member that forms a plasma generation space in which plasma is generated a gas introduction unit for introducing gas into the container; a plasma generation unit including an antenna that is provided in an external space of the container and configured to excite the gas in the plasma generation space with an electric field that is generated by a high-frequency voltage fed from a power supply; and a substrate holding unit that is capable of holding the substrate. A coating film that contains a semiconductor material is formed on a surface of the second container member that is arranged close to the antenna.</p> |
