| 摘要 |
<p>Described herein are methods of forming dielectric films comprising silicon, such as, but not limited to, silicon oxide, silicon oxycarbide, silicon carbide, and combinations thereof, that exhibit at least one of the following characteristics: low wet etch resistance, a dielectric constant of 6.0 or below, and/or can withstand a high temperature rapid thermal anneal process.
The methods employ a silicon-containing precursor having the formula R 1 3 Si-R 2 -SiR 3 3 , for example 1,4-disilabutane, and an oxygen source which is provided in a molecular amount less than a 1:1 ratio to the silicon precursor.</p> |
